The HJT solar cell represents a new generation of superior bifacial solar technology. It is made out of an n-type wafer, which combines the merits of crystalline silicon and thin-film technologies to form a single composite structure. As one of the most effective cell passivation technologies on the market, the HJT ensures that solar cells deliver high efficiency and great power even in hot climates.
26.50 %
Champion Efficiency
n-type, 210 mm*105 mm
Format
    5.40-5.56 W
    Power Range
    24.5-25.2 %
    Efficiency Range
    Higher Cell Efficiency
    • Wafer gettering combined with microcrystalline cell
    • Excellent temperature coefficient
    • Lower LID and superior anti-PID performance
    Maximizing Module Power
    • Zero-busbar technology combines half-cell design
    • Bifacial structure ensures more power
    • Lower LCOE by HJT solar system
    5.62-5.78 W
    Power Range
    25.5-26.2 %
    Efficiency Range
    Higher Cell Efficiency
    • Wafer gettering combined with microcrystalline cell
    • Excellent temperature coefficient
    • Lower LID and superior anti-PID performance
    Maximizing Module Power
    • 20-busbar technology combines half-cell design
    • Bifacial structure ensures more power
    • Lower LCOE by HJT solar system
  • G12-0BB HJT Solar Cell
  • G12-SMBB HJT Solar Cell
  • HJT 3.0
    Combining gettering process and double-sided uc-Si to maximize cell efficiency and module power.
cell information
HS-210R-B96-DS
  • Open Circuit Voltage(Voc)
    50.74V
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