The HJT solar cell represents the next generation of advanced bifacial solar technology. Constructed from an n-type wafer, it combines the advantages of crystalline silicon and thin-film technologies into a single, high-performance structure. As one of the most effective passivation technologies available, HJT ensures that solar cells maintain high efficiency and deliver superior power output, even in hot climates.
26.41
%
Champion Efficiency
n-type, 182 mm*105 mm
Format
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4.87-5.01 WPower Range25.5-26.2 %Efficiency RangeHigher Cell Efficiency-
Wafer gettering combined with microcrystalline cell -
Excellent temperature coefficient -
Lower LID and PID
Maximizing Module Power-
Zero-busbar technology combines half-cell design -
Bifacial structure ensures more power generation -
Lower LCOE for HJT solar system construction
-
-
4.87-5.01 WPower Range25.5-26.2 %Efficiency RangeHigher Cell Efficiency
-
Wafer gettering combined with microcrystalline cell -
Excellent temperature coefficient
-
Lower LID and PID
Maximizing Module Power-
18-busbar technology combined with half-cell design
-
Bifacial structure ensures more power generation
-
Lower LCOE for HJT solar system construction
-
-
HJT 3.0Combining gettering process and double-sided uc-Si to maximize cell efficiency and module power.
Cell information
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