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Huasun HJT solar cell was made of ultra-thin N-type silicon wafer which employs 0BB/SMBB and μc-Si technology. The champion efficiency has reached 26.5% in mass production, and there is a clear path of efficiency improvement with huge potential.
Format: N-type, 210.1mm*105.05mm±0.15mm
Thickness: 110+20/-10μm, 120+20/-10μm
Max. Power: 5.56W
Max. Efficiency: 25.2%
Format: N-type, 210.1mm*105.05mm±0.15mm
Thickness: 110+20/-10μm, 120+20/-10μm
Max. Power: 5.78W
Max. Efficiency: 26.2%
Format: N-type, 182.1mm*105.05mm±0.15mm
Thickness: 110+20/-10μm, 120+20/-10μm
Max. Power: 5.01W
Max. Efficiency: 26.2%
Format: N-type, 182.1mm*105mm±0.15mm
Thickness: 110+20/-10μm, 120+20/-10μm
Max. Power: 5.01W
Max. Efficiency: 26.2%
Format: N-type, 182.1mm*91.75mm±0.25mm
Thickness: 110+20/-10μm, 120+20/-10μm
Max. Power: 4.27W
Max. Efficiency: 25.6%
HJT cell uses α-Si thin-film as passivation materials to reduce the loss caused by the migration, which increases the open circuit voltage to 750mV.
Up to 97% bifaciality faciliates more sunlight to be captured and converted into power on the backside.
The temperature coefficient of Huasun HJT himalaya cell is -0.24%/℃, which ensures more power output in high temperature environment.
Minimize the path of flowing current and lower resistance-related power losses, further improving cell efficiency.
Know more about HJT or how to become Huasun's partner.
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